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UNISONIC TECHNOLOGIES CO., LTD DTD123Y
DIGITAL TRANSISTORS (BUILT-IN RESISTORS)
FEATURES
* Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow negative input.
NPN EPITAXIAL SILICON TRANSISTOR
3
2
1
SOT-23
EQUIVALENT CIRCUIT
R1 IN R2 GND OUT
3
2
1
SOT-323
*Pb-free plating product number: DTD123YL
IN GND
OUT
ORDERING INFORMATION
Order Number Normal Lead Free Plating DTD123Y-AE3-6-R DTD123YL-AE3-6-R DTD123Y-AL3-6-R DTD123YL-AL3-6-R Note: G: GND I: Input O: Output
DTD123YL-AE3-6-R (1)Packing Type (2)Pin Assignment (3)Package Type (4)Lead Plating
Package SOT-23 SOT-323
Pin Assignment 1 2 3 G I O G I O
Packing Tape Reel Tape Reel
(1) R: Tape Reel (2) refer to Pin Assignment (3) AE3: SOT-23, AL3: SOT-323 (4) L: Lead Free Plating, Blank: Pb/Sn
MARKING
DC3Y
www.unisonic.com.tw Copyright (c) 2005 Unisonic Technologies Co., Ltd
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ABSOLUTE MAXIMUM RATING (Ta=25)
NPN EPITAXIAL SILICON TRANSISTOR
PARAMETER SYMBOL RATINGS UNIT Supply voltage VCC 50 V Input voltage VIN -5 ~ +12 V Output current IC 500 mA Power dissipation PD 200 mW Junction Temperature TJ +150 Storage Temperature TSTG -55 ~ +150 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25)
SYMBOL VIN(OFF) Input Voltage VIN(ON) Output Voltage VOUT(ON) Input Current IIN Output Current IO(OFF) DC Current Gain GI Input Resistance R1 Resistance Ratio R2/R1 Transition Frequency fT * Transition frequency of the device PARAMETER TEST CONDITIONS VCC=5V, IOUT=100A VOUT=0.3V, IOUT=20mA IO/II=50mA/2.5mA VIN=5V VCC=50V, VIN=0V VOUT=5V, IOUT=50mA MIN 2 0.1 0.3 3.6 0.5 2.86 5.5 TYP MAX 0.3 UNIT V V mA A K MHz
56 1.54 3.6
VCE=10V, IE= -50mA, f=100MHz *
2.2 4.5 200
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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TYPICAL CHARACTERISTICS
Fig.1 Input Voltage vs. Output Current (ON Characteristics) 100 50 20 10 5 2 1 500m 200m 100m 5001m 2m 5m 10m 20m 50m100m200m 500m Output current, IO (A)
Fig.3 DC Current Gain vs. Output Current 1K VOUT=5V
NPN EPITAXIAL SILICON TRANSISTOR
Fig.2 Output Current vs. Input Voltage (OFF Characteristics) 10m 5m VCC=5V
VOUT=0.3V
Input Voltage, VIN(ON) (V)
Output Current, IOUT (A)
2m 1m 500 200 100 50 20 10 5 2 1 0 0.5 1.0 1.5 2.0 2.5 3.0 Input Voltage, V I(OFF) (V)
Fig.4 Output Voltage vs. Output Current 1 500m IO/II=20 Ta=100 25 -40
Ta=-40 25 100
Ta=100 25 -40
Dc Current Gain, GI
500 200 100 50 20 10 5 2 1 500
Output Voltage : VOUT(ON) (V)
Ta=100 25 -40
200m 100m 50m 20m 10m 5m
2m 5m10m20m50m100m200m500m Output Current, IOUT (A)
2m 1m 500 1m 2m 5m10m 20m50m100m200m500m Output Current, IOUT (A)
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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